Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

In this paper we show simulation and experimental results of new 3.3kV RET-IGBT (Recessed Emitter Trench IGBT). Simulation results show that although the RET concept reduces the active region's trench to trench mesa, it does not show the reported inversion layer modulation phenomenon in conventional "narrow mesa" devices, which can degrade performance with very fine dimensions. It is also shown that High Voltage RET-IGBT can show superior V
CE(sat)
performance compared to standard Trench IGBT without degrading the dynamic performance such as RBSOA and SCSOA when devices are paralleled.