Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs

This work discusses about the short-circuit capability of new generation Enhancement-mode p-GaN power HEMTs. The electrothermal behavior of two commercially available devices is experimentally verified up to the failure events. Mission profile compact thermal simulations are used to estimate temperature increase during short-circuit tests. The assumption of a temperature-dependent gate current is then investigated by means of 2D electro-thermal TCAD simulations on a reference structure. Finally, a possible trade-off between gate driver resistance and short-circuit capability is discussed.