Design and EM-simulation of MIM capacitor

The passive RF/Microwave circuit components such as capacitor and inductor are essential in the design of deep submicron multilayer circuits (MIC). The passive component has characteristics to dissipate energy and reduce circuit efficiency. To overcome this, we need to design an accurate value of passive components by scaling geometric structure with respect our applications. In this paper, we design metal insulator metal (MIM) capacitor and it has advantages of low cost and higher performance efficiency. The MIM capacitor is designed by using RT/Duroid substrate material with copper conductor plates (0.035 thickness). The basic formula is used for a geometric calculation like area, dielectric constant and the distance between the two conductor plates. The designed MIM structure is EM simulated using high-frequency NI/AWR simulator. The observed results show that an increases in conductor plate's area will increase the capacitance value by decreasing capacitive reactance (Xc). The larger area of the plates will affect to decreases quality factor due to increase in the passivity of the structure. This work helps to design suitable value of MIM capacitors design at the 600MHZ operating frequency. We present EM simulated data showing how the quality factor depends on with respect to plate area, capacitive reactance, passivity and capacitance value.