Cu Filament Based Resistive Switching and Oxidation Reduction through Dopamine Sensing in Novel Cu/MoS2/TinN Structure

In this work, we report a novel Cu filament based 5 nm-thick MoS2 in Cu/MoS2/TiN devices with stable DC endurance, long program/erase (P/E) endurance of >8×107 cycles at a low P/E current of 100 μA and 100 ns speed, and stable data retention as compared to 2 nm-thick MoS2 because of controlled Cu migration under external bias. The neuromorphic phenomena is also explored. The Cu oxidation- reduction is confirmed by dopamine sensing with a low concentration of 10 pM. Therefore,this novel approach will not only help to investigate the resistive switching mechanism but also this will be useful early diagnosis of Parkinson disease of human in near future.