A Comprehensive Study on DDR4 MRAM and ReRAM Power Estimation Using a Parameterized NVM Power Calculator

In this paper, we study diverse device and chip- level parameters of MRAM and ReRAM to make their storage capacity and power consumption comparable to DDR4 SDRAM under different system read/write workload conditions. Using a parameterized NVM power calculator, our analysis results show that both MRAM and ReRAM become beneficial at high- stress workload cases (Read:Write=60%:20%, 40%:40%) at the cost of downsizing the page size to 2,048 or 1,024 bits. For both low and high- stress workload, the suggested retention time of each 16Gb MRAM and 32Gb ReRAM is >1s and >10s, respectively to compete with 8Gb DDR4 SDRAM in power aspect. The 16Gb MRAM and 32Gb ReRAM show negligible refresh power (<;1mW) when retention time is longer than 100s.