Hybrid P-Channel/N-Substrate Poly-Si Nanosheet Junctionless Field-Effect Transistors With Trench and Gate-All-Around Structure

This paper demonstrates the gate-all-around P/N hybrid nanosheet p-channel junctionless field-effect transistors (GAA NS-JLFET) with trench and raised source and drain structure. The GAA NS-JLFET exhibits the superior electrical properties, including high field-effect mobility (18.9 cm
²
/Vs), high on/off current ratio (>5 × 10
⁶
), steep subthreshold slope (136 mV/dec.), and low DILB (60 mV/V). The high mobility and steep subthreshold slope of this GAA NS-JLFET indicates that the conducting hole filled the whole thin nanosheet channel. This GAA NS-JLFET is simple to fabricate and highly favorable for use in advanced system-on-panel and three-dimensional stacked ICs applications.