Determination of quality factor dependence on temperature and impurity concentration in monolithic spiral inductor

This paper presents a simple lumped-element circuit model for analyzing quality factor (Q) dependence on temperature and impurity concentration. Q of monolithic spiral inductor has been determined over temperature range from /spl sim/55 to 125/spl deg/C for various frequencies and impurity concentrations. The effects of temperature and concentration in silicon substrate have been modeled and simulated with analytical expression for carrier mobility. The model that incorporated the temperature dependence of the inductor's parasitics was adopted from literature and shown to give good agreement with measured and published data.