Geometry- and bias-dependence of leakage current and overlap capacitance in a-Si:H TFTs

In this paper, we describe the correlation in the reverse leakage and capacitance behavior in hydrogenated amorphous silicon (a-Si:H) inverted staggered thin film transistors (TFTs). The mechanism underlying both leakage and capacitance, and their bias-dependence for large reverse voltages, Vdg<30 V, may be attributed to a field-enhanced Poole-Frenkel generation and subsequent charge transport in the high field depletion region near the drain.