IEEE ITRW Working Group Position Paper-System Integration and Application: Gallium Nitride: Identifying and Addressing Challenges to Realize the Full Potential of GaN in Power Conversion Applications

The International Technology Roadmap for Wide Band Gap Power Semiconductors (ITRW) has a specific working group for the area of gallium nitride (GaN) applications. This article summarizes the working group's progress to date. The team has a range of members drawn from industry and academia to provide the short-,medium-, and long-term perspectives required for a roadmap.