Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistors

We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.