Manipulation of Interface Trap-Induced Generation Current by Substrate Bias in MOSFET

The interface trap-induced generation current I
_ge
in MOSFET is very weak and hard to control. In this letter, we report the anomalous variations of I
_ge
under the influence of substrate bias V
_b
in MOSFET. A physical mechanism behind of these experiments is proposed for manipulating the I
_ge
curve by V
_b
. Based on this mechanism, the shift, compression, and stretch of I
_ge
curve can be realized.