Elements for upset hardened associative memories

The hardened logical elements on base the STG DICE memory cell are studying for using in an associative memory. The TCAD simulation of the 65-nm CMOS elements shows the resistance to impacts of single nuclear particles up to 60 MeV×cm2/mg. Short-term noise pulses less 600 ps can be on the output of a combinational logic of elements at the linear energy transfer 60 MeV×cm2/mg.