Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO2 Based RRAM Arrays

This paper proposes a novel technique for reducing programming time and energy consumption in resistive random access memory (RRAM) arrays based on ramped voltage stress (RVS). RVS method is correlated to conventional constant voltage stress method (CVS) using an analytical model validating RVS as a reliable technique for switching time characterization in RRAM arrays. RVS method is optimized to reduce programming time and energy consumption providing a quantitative and qualitative link between programming method and tails improvement in memory arrays. Switching time distribution is much more controlled: half a decade using optimized RVS in comparison with ~3 decades distribution using conventional CVS method. Energy consumption is reduced by 4 orders of magnitude at +5σ quantiles using our proposed technique compared to CVS.