On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures

Comprehensive review and reanalysis are done on previously reported experimental hot carrier degradation data in various MOSFET architectures. The universality of time kinetics and voltage acceleration of degradation, obtained using multiple measurement techniques, is analyzed for OFF- and different ON-state modes in long and short channel planar and drain extended MOSFETs and FinFETs. The similarities and differences of such diverse measurement methods are analyzed. Existing theories are qualitatively benchmarked against this analysis, and capabilities as well as inconsistencies of those theories are discussed.