Electrical and thermal characterization of SiC power MOSFET

Design of efficient power converters that fully exploit the potential of SiC power MOSFET is supported by circuit simulations, wherein accuracy of power device models is extremely important. In this paper, a surface-potential based device model for SiC power MOSFETs is briefly presented. Then, measurement techniques suitable for extracting the model parameters are reviewed. Finally, the characterization of self-heating effect and input capacitance measurement based on switching capacitance are explained.