Ultra-fast directly self-assembly materials for sub-5 nm lithographic patterning

The directed self-assembly (DSA) of block copolymers has attracted a great deal of interest due to its potential applications in sub-10 nm or sub-5 nm lithography [1-3]. The conventional organic-organic DSA materials such as poly-(styrene-block-methyl methacrylate) (PS-b-PMMA) have been extensively studied [4,5], however, the low etch contrast and the difficulty to reduce L0 limits its application. In this study, we designed and synthesized the novel DSA materials based on PS-b-PMMA. Through the modifying of acrylics part, segment-segment interaction parameter (x) can be significantly increased, which leads to rapid self-assembly and higher resolution.