Performance evaluation of tunneling field effect transistor on Terahertz detection

Tunneling field-effect transistor (TFET) with integrated circuit manufacture process is capable of rectifying high frequency radiations in THz region. As an efficient device to detect Terahertz signal. In this paper, we demonstrate a Si-based TFET device for THz imaging. The static characteristics and THz performance are presented by using technology computer-aided design simulation. For an optimally designed TFETs with SS of 40.3mV/dec, it has a high responsivity of 4300V/W to a 1THz radiation. Compared to the traditional CMOS Terahertz detector, TFET-based one has faster response rate and higher detect efficiency, suggesting TFET a promising device for the low-power Terahertz imaging.