Digital embedded memory scheme using voltage scaling and body bias separation for low-power system

Standard Cell based Memory (SCM) is drawing attention as a technique to use the standard digital design flow to realize embedded memory macros. One of the strong points of SCM is that it correctly operates at such low voltage that SRAM macros provided by vendors usually do not work. This paper describes a design of energy-efficient SCM using Silicon-on-Thin-BOX (SOTB). We present automatic layout methodology for optimal body-bias separation (BBS) for SCM, which enables to apply different body bias voltages to latches and to other peripheral circuits within SCM. Results from simulations and chip measurements have demonstrated effectiveness of this approach.