A New Method to Quantify Contact Resistance Using Localized-Illumination Photoluminescence Technique in a Solar Cell

An approach to derive the contact resistance of solar cell using localized-illumination photoluminescence (PL) imaging technique is presented. In this work, we used advanced finite-element simulations in order to understand dependency of PL intensity with variation in contact resistance. The technique involves the comparative analysis of PL images taken at different contact resistance using finite-element simulation software. These data will be then compare with the experimental values in order to quantify this parameter. For this localized-illumination, confined concentrated light beam using array of high power LEDs to generate electron-hole pairs at one part of the solar cell, thus injecting photocurrent, which travels to the dark area of the cell. The interpretation of this comparative work results in evaluation of contact resistance for solar cell.