Investigation of InP defect characteristics grown using novel TF-VLS technique

The optoelectronic behavior of defects in InP grown using thin-film vapor-liquid-solid (TF-VLS) technique are characterized and analyzed in this paper. Cathodoluminescence spectroscopy is used to investigate the effect of Zn doping on the bulk defect states. The spatial distribution of electrically active defects is mapped using cathodoluminescence at the defect peak energy. CL mapping is also used to form a spatial distribution of defects corresponding to the deep level defect energy peak. Conductive AFM is used to analyze grain boundary conductivity. Light and dark surface potential measurements were carried out to better understand band bending at the grain boundaries. Understanding the recombination activity of defects in these low-cost III-V layers will help to build high efficiency single junction and multijunction solar cells from this material.