Detailed Characterization for TCAD Simulations of GaAs0.76P0.24/Si1-yGey/Si Single Junction Solar Cells

In this work a TCAD simulation model for GaAs
_0.76
P
_0.24
single junction solar cells grown on Si substrate via SiGe buffer layers is presented, along with experimental characterization of the cells. Simulations and experimental results are used to identify recombination factors present in the cells. GaAsP lifetime is estimated to be between 1-10 ns, depending on the window layer lifetime and interface recombination. Results show very good fit for current-voltage characteristics, while spectral response of simulated cells shows that more specific recombination definitions and accurate optical data are required to further improve the accuracy of simulation estimated recombination factors.