Low-resistance and highly-transparent GaSb-based tunnel junctions

Tunnel junctions with low differential resistance and high transparency have been grown by molecular beam epitaxy on GaSb substrates. The resulting devices have been characterized and analyzed using a combination of electrical measurements and modeling. These devices have importance to multi-junction solar cells grown on GaSb substrates. The structures contain an n-type InAs quantum well embedded in a GaSb p/n junction, exploiting the high tunnel probability at the broken gap interface between p-type GaSb and n-type InAs, whilst having a minimal impact on the transparency of the device.