An investigation of the role of recombination processes in the operation of InAs/GaAsl-xSbx quantum dot solar cells

The electroluminescence and photoluminescence from an InAs/GaAs
_1-x
Sb
_x
quantum dot solar cell are investigated as a function of temperature and correlated to the PV characteristics of the cell over the same temperature range. Analysis of the dominant recombination mechanism is shown to change from radiative to non-radiative above ~150 K, which is consistent with a
reduction
in the
J
_sc
(and
V
_oc
) at elevated temperatures in these devices.