Comparative Study of >2 eV Lattice-Matched and Metamorphic (AL)GaInP Materials and Solar Cells Grown by MOCVD

This work investigates >2 eV (Al)GaInP alloys grown via MOCVD for application as the top junction of IMM solar cells. We explore balancing Al content and lattice constant as two complementary variables to achieve target bandgaps in one material system. Prototype solar cell performance and defect spectroscopy (DLTS/DLOS) are used to evaluate the various alloys. Results thus far suggest that metamorphic GaInP is the most promising route for a high-performance top cell up until metamorphic GaInP becomes indirect.