Interdigitated back contact silicon solar cell with perovskite layer for front surface passivation and ultraviolet radiation stability

In this work, advanced surface passivation technique has been discussed for the n-type wafer based interdigitated back contact silicon (IBC-Si) solar cells. Perovskite (CH
₃
NH
₃
PbI
₃
) has been used as a front surface passivation layer. Results show that the presence of perovskite as a passivation layer improves the photovoltaic behavior of the device by preventing the surface recombination of minority carriers (holes), due to the creation of positive electric field at the perovskite/silicon interface. UV stability at higher surface recombination velocity (SRV) has also been observed in the surface passivation technique. The impact of SRV on optical as well as electrical behavior has also been obtained, and results are compared with conventional antireflective (AR) coating based cell. Power conversion efficiency of the perovskite passivated solar cell is 9.5% higher compared to AR coating based solar cell. All the simulations have been done using SILVACO ATLAS device simulator.