New Findings of Thermal Effect on pm-Si:H Solar Cells Optoelectronic Properties

This work describes the effect of temperature on pm-Si:H PIN and NIP structures deposited by PECVD. Temperature dependent measurements were conducted to understand hydrogen diffusion and cell performance by analyzing structural and optical properties. Hydrogen rearrangement on films and microstructure changes were observed. The total hydrogen that effuses from PIN structure is lower than for the NIP related to defects creation after induced hydrogen diffusion, break of Si-H bonds and the generation of dangling bonds. These could give significant evidence for the development of a more stable device during operation besides an enhanced functional performance of this type of structure.