Fixed Pattern Noise and Temporal Noise Degradation Induced by Radiation Effects in Pinned Photodiode CMOS Image Sensors

The experiments of the pinned photodiode complementary metal-oxide-semiconductor (CMOS) image sensors irradiated by
⁶⁰
Co γ rays, neutrons, and protons are presented. The CMOS image sensors are manufactured using a standard 0.18-μm CMOS technology with 4 MP. The fixed pattern noise (FPN) and temporal noise versus the total doses at different dose rates are analyzed. The FPN and temporal noise degradations induced by
⁶⁰
Co γ rays with different biased conditions are compared. The FPN and temporal noise degradations induced by displacement damage are also investigated by proton and neutron radiation. The degradation mechanisms of the FPN and temporal noise induced by
⁶⁰
Co γ ray, neutron, and proton radiation are analyzed.