Fabrication of Amorphous Indium–Gallium– Zinc–Oxide Thin-Film Transistor on Flexible Substrate Using a Polymer Electrolyte as Gate Dielectric

We have fabricated a flexible thin-film transistor (TFT) with relevant high performance indices using polymer electrolyte as gate dielectric and amorphous indium–gallium–zinc–oxide (a-IGZO) (a-InGaZn
₂
O
₅
) as a channel on polyimide Kapton tape. Low temperature (
$\approx 100~^{\circ }\text{C}$
–120 °C) prepared a-IGZO, showed n-channel device characteristic, and operated in the enhancement mode with a high saturation mobility of 42 cm
²
/
$\text {V}\cdot \text {s}$
, good ON/OFF ratio of ~10
⁵
, low threshold voltage of ~0.7 V, and low subthreshold swing of ~175mV/decade. The improvements of the performance indices arise due to influence high value of specific gate capacitance of polymer electrolyte. The gate bias stress test of the flexible TFT showed the stable electrical characteristics.