Wafer level EDMR: Magnetic resonance in a probing station

We report on a novel semiconductor reliability technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union with a semiconductor probing station allows EDMR measurements to be performed at the wafer level. Our measurements forgo a microwave cavity or resonator for a very small non-resonant near field microwave probe [1]. Bipolar amplification effect (BAE) [4] and spin dependent charge pumping (SDCP) [5] were demonstrated on various SiC MOSFET structures. These measurements were made via frequency-swept EDMR. The elimination of the resonance cavity, and incorporation with a wafer probing station, greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.