On contacts to III-nitride deep-UV emitters

Although contacts to III-nitride visible and UV-A based emitters has been well explored, understanding the contacts to III-nitride deep-UV emitters have attracted research attention recently. Owing to the wide bandgap, both n-type and p-type contact metallization techniques result in a Schottky barrier at the metal-semiconductor interface. A way to reduce the contact resistance is to achieve a higher free carrier concentration in the epitaxial layer. As a result, growth of III-nitride epitaxial layers on native substrates are providing pathways for significant performance improvement. However, understanding the contacts to deep-UV emitters grown on native substrates are necessary to allow further performance improvement.