Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications

In this paper, programming operations are optimized for low energy consumption and short latency time applications in RRAM kb arrays. Origin of consumption (role of pulse's time, programming current and voltage in SET and RESET operations) is quantified on HfO
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oxide based RRAM technology. Specific patterns are evaluated to reduce latency time and energy consumption in memory devices. Innovative circuit with on the fly switching detection is proposed, allowing to reduce programming consumption down to single pJ operation in large memory arrays.