On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs

This experimental study reports a systematic investigation of Safe Operating Area limits in AlGaN/GaN HEMT using sub-μs pulse characterization with on the fly Raman and CV characterization to probe defect and stress evolution across the device. Influence of a recess depth on SOA boundary is analyzed. Post failure analysis corroborates well with the failure physics unveiled in this work.