Capping IGZO transistor with MAPbI3 perovskite light absorber

Perovskite capped IGZO thin film transistor (TFT) is theoretically a promising new device for advanced photodetection and image sensing. This hybrid approach in principle combines the merits of the low turn-off dark current of the IGZO TFT and the high absorption coefficient of perovskite light absorber. However, during fabrication, solution-processed perovskite layer usually deteriorate the performance of the IGZO TFTs. In order to achieve compatible fabrication conditions, perovskite thin films are deposited on the IGZO TFTs by one-step and two-step spin-coating methods, and their effects on the TFT transfer characteristics are investigated. Furthermore, patterned PbI
₂
are evaporated on IGZO TFT via shadow masks, and its feasibility of fabricating perovskite sensing pixels on IGZO TFT arrays are discussed.