Reconfigurable NAND-NOR circuits fabricated by a CMOS printing technique

We report on the technological realization of an electronic circuit, which is able to exhibit complementary NAND and NOR operation by four transistors only. The circuit is based on externally connected reconfigurable transistors (RFETs) that can be electrically programmed to operate as p-or n-type unipolar FETs altering the Boolean operation of the circuit. The RFETs have been based on an array of synthesized intrinsic Si nanowires integrated by a contact printing technique. The circuit demonstrates functionality enhancement and the reduction of transistor count of fine grain reconfigurable technology experimentally by a comparably simple processing technology.