Hydrogen sensing properties of SnO2 nanocrystalline thin films

The results of response to hydrogen were presented in this work. SnO
₂
nanocrystalline thin films have been deposited on silicon substrates by spin-coating from precursor solution, followed by slow thermal annealing in oxygen atmosphere at different temperatures (200-700 °C). The precursor solution consisted of 1.0-2.0 M SnCl
₄
·5H
₂
O in isopropanol. Changes in the layers resistance were measured for the hydrogen concentration range of 0.5%-1.5% in nitrogen atmosphere and in temperature range from 175 °C to 330 °C. Maximum sensor response was observed at 275 °C. On the other hand, the shortest response times were observed at 330 °C.