Influence of Latch-Up Immunity Structure on ESD Robustness of SOI-LIGBT Used As Output Device

The influences of three typical latch-up immunity structures, including high concentrated P++ doping layer, N+/P+ segmented emitter and P-sink well, upon electro-static discharge (ESD) robustness of the silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) devices are compared. The high concentrated P++ doping layer makes the SOI-LIGBT have the weakest ESD robustness, because the slow turn-on speed of parasitic n-p-n transistor brings long-time high power state and heat accumulation. The N+/P+ segmented emitter causes the SOI-LIGBT to own the medium ESD robustness and the SOI-LIGBT fails at the emitter side due to the crowded current made by the small N+ emitter region. For the P-sink well, it makes SOI-LIGBT exhibit the strongest ESD robustness, because the current can flow along the P-sink into the emitter vertically, which is helpful for reducing surface current density. Considering the comprehensive performances, the P-sink well is suggested as the latch-up immunity structure, which guarantees high latch-up immunity ability and strong ESD robustness simultaneously.