Mid-infrared laser diode active region based on type-II broken gap quantum wells

Summary form only given. We describe a mid-infrared laser diode active region based on type-II GaInSb/InAs quantum wells. The structure is designed for efficient electrical injection from the barriers. The band structure has been engineered to minimize the deleterious effects prevalent in mid-infrared materials, such as Auger recombination and intersubband absorption.