Photorefractive wave mixing in semi-insulating InGaAs/GaAs multiple quantum wells

Summary form only given. Photorefractive multiple quantum wells (MQWs) have become important for the realization of fast and two-dimensional optical image processing devices. Wang et al. have reported the photorefractive effect in InGaAs-GaAs MQWs around 0.9 /spl mu/m. But the details of two-wave mixing (TWM) have not been mentioned. Here we report the photorefractive effect including the TWM properties in InGaAs-GaAs MQWs around a wavelength of 0.93 /spl mu/m.