Analysis and design of an overcurrent protection scheme based on parasitic inductance of SiC MOSFET power module

This paper presents an overcurrent protection scheme based on parasitic inductance between the power source and the Kelvin source of the power module. A complete design process and comprehensive analysis of the overcurrent protection scheme, which can be applied generally, to any power module containing Kelvin source is shown. The protection circuit can be used to detect both very intense short-circuit fault (SC) and relatively slow overcurrent fault (OC), fault out of load for example. A 1.2 kV SiC MOSFET gate driver prototype with integrated overcurrent protection circuit is designed to verify the functionality of the protection method.