Design considerations for GaN transistor based synchronous rectification

With improved electrical characteristics, GaN transistors have demonstrated superior performance in numerous hard-switching, soft-switching, and resonant power applications. In this paper, we will focus on the evaluation of GaN transistors as synchronous rectifiers and discuss design considerations unique for low voltage (<;100 V), high frequency GaN transistor based synchronous rectification applications. Two experimental prototypes, operating from V
_in
=48 V to V
_out
=12 V and f
_sw
=300-1000 kHz and V
_in
=12 V to V
_out
=1.8 V at f
_sw
=10 MHz are used for evaluation.