Gate metal engineered heterojunction DG-TFETs for superior analog performance and enhanced device reliability

This work aims at demonstrating the superiority of a Germanium (Ge) source Double Gate Tunnel Field Effect Transistor (DG-TFET) as compared to a conventional Silicon (Si) source DG-TFET in terms of improved analog characteristics. In particular, the influence of Interface Trap Charges (ITC) present at the dielectric semiconductor interface on the reliability of the device is investigated. In addition, a Gate Material Engineered (GME) Ge source DG-TFET is proposed to improve the device reliability through a modification of the flatband voltage of the device near the source channel junction. A comparative analysis of the influence of ITC on a Ge source DG-TFET and a Ge source DG-TFET with Gate Material Engineering (GME) reveals superior device reliability with the amalgamation of GME onto Ge source DG-TFET.