Wafer-bonded InGaAlP/AuBe/glass light-emitting diodes

Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology.