Tuning of quantum-well infrared photodetectors using ion beam induced quantum-well intermixing

Summary form only given. Quantum well intermixing (QWI) is a method of considerable recent interest due to its wide applicability in optoelectronics. We shall demonstrate the use of intermixing in tuning quantum-well infrared photodetectors (QWIPs). The post-growth tuning of QWIPs allows the detector to be fine tuned to a particular wavelength band. We have previously shown that proton implantation can achieve large energy shifts with good recovery in the optical properties after standard annealing procedures. For the present study we have fabricated AlGaAs-GaAs QWIPs using molecular beam epitaxy.