New trends for mm-wave FET structures

This paper discusses some new viewpoints of signal and noise performances of mm-wave FETs. The effect of reactive (capacitive and inductive) electrode loading and the influence of the slicing procedure in sliced modeling of mm-wave FETs have been studied. The proposed model takes into account not only the active coupling elements but also the capacitive and inductive coupling elements of the device. The results show that a proper sliced model with a suitable electrode loading may improve the device signal and noise performances.