Modeling of DG MOSFET $I$ – $V$ Characteristics in the Saturation Region

A double-gate MOSFET model that goes beyond the gradual channel approximation is developed by incorporating the effect of lateral field gradient on carrier density. It is shown that while the oxide field crosses zero at the point of saturation and becomes negative beyond it, the channel is not pinched off of charge carriers. The model generates Ids-Vds characteristics continuous into the saturation region with the finite output conductance consistent with TCAD. An explicit expression is derived for the output conductance in saturation in terms of basic device parameters.