Terahertz near field coupling for integrating III-V photodiodes on silicon

A novel compact terahertz near field coupling (NFC) based hybrid integration platform for interconnecting active III-V semiconductor devices, e.g. a high frequency photodiode (PD), on Silicon is designed, simulated, and fabricated. The studied NFC approach allows mounting InP-based triple transit region photodiodes (TTR-PD) with integrated log periodic toothed antenna (LPTA) as Terahertz transmitter on a highly resistive silicon (HR-Si) substrate receiving the terahertz radiation via a second LPTA. The electrical THz output power of the TTR-PD is transferred using electromagnetic NFC to the receiving antenna. Numerical simulations of the NFC integration technique show an insertion loss (IL) of 2 dB at 250 GHz with a return loss (RL) better than 10 dB. A 3dB operating bandwidth of 43 GHz (234 GHz-277 GHz) is achieved.