Doherty power amplifier in 28 nm CMOS for 5G applications

This paper presents the design of a fully integrated Doherty power amplifier in 28 nm CMOS technology. The circuit is optimised for the frequency band 5-6 GHz to provide maximum output power of 20 dBm with 10 dB output power back-off (OBO) and power gain of 10 dB at 0 dBm input power level. Drain efficiency (DE) of 35 % is obtained at OBO with almost flat response over the entire bandwidth.