A modified reverse voltage inverter topology with inverted sine wave carrier PWM technique

In this paper, a single phase modified reverse voltage inverter topology is presented. It can operate both in symmetrical and asymmetrical configurations. It consists of one upper sub-module (USM), one lower sub-module (LSM), and in between these two, half-bridge cells (HBCs) are cascaded to form level generation block (LGB) for unipolar voltage levels generation. An H-bridge is used as a reverse voltage block (RVB) to convert into bipolar voltage levels including zero level. The level of voltage can be increased by increasing the number of HBCs in LGB. The Inverted sine carrier pulse width modulation (ISCPWM) technique is used to generate the gate pulses required for the power switches. The various comparative analyses are provided with other single phase topologies. The proposed topology results in the reduction of number of power switches with higher voltage levels and improved power quality. Experimental results are provided to validate the circuit operation.