On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSix and the specific contact resistivity in TiSix/n-Si contacts for sub-16/14 nm nodes and beyond

Owing to inherent advantages compared to Ni-based contacts adopted in previous nodes, ultrathin TiSi
x
/n-Si (0x
/n-Si Ohmic contacts has been utilized extensively, the aborative exploration of the impact of Ge PAI on both the formation of ultrathin TiSi
x
and the electrical performance in TiSi
x
/n-Si contacts is still of great interest and practical merit. We here investigate the impact of different Ge PAI conditions on the formation of ultrathin TiSi
x
as well as on the specific contact resistivity (ρ
c
) in TiSi
x
/n-Si contacts systematically.