Effect of deep level traps on the I-V and C-V characteristics of InP/InGaAs heterojunction

In this paper, the impact of deep level traps on the I-V and C-V characteristics of InP/InGaAs heterojunction have been studied by introducing deep level traps in pre and post-irradiation samples. In this case, forward recombination current and junction capacitance in dependence of the deep level density and energy have been analyzed by TCAD simulation and experiments. The simulation results are in good agreement with the experimental results. The junction capacitance and recombination current both increase with the increasing of deep level density. Apart from this, the radiation induces deeper level traps, which contributes more to these increased trends.